| 1. | The width of the depletion region grows larger with higher voltage.
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| 2. | The high doping reduces the length of the depletion region because
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| 3. | Hence, electrons can easily tunnel through the depletion region.
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| 4. | Inside the depletion region, both diffusion current and drift current are present.
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| 5. | It also assumes that the R G current in the depletion region is insignificant.
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| 6. | This is called a " depletion region ".
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| 7. | With increased doping of the semiconductor, the width of the depletion region drops.
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| 8. | Below a certain width, the charge carriers can tunnel through the depletion region.
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| 9. | Because the total charge on either side of the depletion region must cancel out.
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| 10. | The charge generation rate is related to specific crystallographic defects within the depletion region.
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